US Patent Issued to FUJIFILM on July 28 for "Composition for treating semiconductor and method for treating object to be treated" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,702, issued on July 28, was assigned to FUJIFILM Corp. (Tokyo).

"Composition for treating semiconductor and method for treating object to be treated" was invented by Yuta Shigenoi (Shizuoka, Japan), Atsushi Mizutani (Shizuoka, Japan) and Tomonori Takahashi (Shizuoka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be treated using a composition for trea...