US Patent Issued to FUJIFILM, FUJIFILM Electronic Materials U.S.A. on June 23 for "Semiconductor etching solution" (Japanese, American Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,628, issued on June 23, was assigned to FUJIFILM Corp. (Tokyo) and FUJIFILM Electronic Materials U.S.A. Inc. (North Kingstown, R.I.).

"Semiconductor etching solution" was invented by Atsushi Mizutani (Shizuoka, Japan), Mick Bjelopavlic (North Kingstown, R.I.) and Carl Ballesteros (North Kingstown, R.I.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen pe...