ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,248, issued on Nov. 3, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).
"Memory device and manufacturing method thereof" was invented by Yu-Cheng Tung (Quanzhou City, China) and Janbo Zhang (Quanzhou City, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a manufacturing thereof are disclosed in the present invention. The memory device includes a substrate, a bit line contact opening, a bit line contact structure, and a first spacer. The bit line contact opening is at least partially disposed in the substrate, and the bit line contact opening includes a first portion, a second portion, and a thi...