US Patent Issued to Fujian Jinhua Integrated Circuit on March 24 for "Semiconductor device and method of fabricating the same" (Chinese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,191, issued on March 24, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor device and method of fabricating the same" was invented by Janbo Zhang (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor memory device and a method of fabricating the same, including a substrate, a plurality of bit lines, a bit line contact, a spacer, a liner layer, and a storage node contact. The bit lines are separately disposed on the substrate. The bit line contact is disposed below one of the bit lines to extend into one active area. The spacer is disposed o...