US Patent Issued to Fujian Jinhua Integrated Circuit on July 21 for "Semiconductor device and fabricating method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,450, issued on July 21, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor device and fabricating method thereof" was invented by Min-Teng Chen (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a fabricating method thereof, and the semiconductor device includes a substrate, a plurality of conductive pads, and a plurality of conductive columns. The conductive pads are separately disposed in a first insulating layer, over the substrate. The conductive columns are separately disposed in a second insulating layer, individually cont...