US Patent Issued to Fujian Jinhua Integrated Circuit on July 21 for "Memory device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,187, issued on July 21, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Memory device and manufacturing method thereof" was invented by Janbo Zhang (Quanzhou City, China), Li-Wei Feng (Quanzhou City, China) and Yu-Cheng Tung (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a manufacturing method thereof are disclosed in the present invention. The memory device includes a semiconductor substrate, bit line structures, isolation structures, a storage node contact structure, and first voids. The bit line structures, the isolation structures, and the storage node contact structure...