US Patent Issued to Fujian Jinhua Integrated Circuit on July 14 for "Semiconductor structure, method of forming the semiconductor structure, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,830, issued on July 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor structure, method of forming the semiconductor structure, and semiconductor device" was invented by Janbo Zhang (Quanzhou City, China), Enping Cheng (Quanzhou City, China) and Li-Wei Feng (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, a fabricating method thereof and a semiconductor device, the structure includes a substrate having a STI region and an AA, with an upper surface of the STI region lower than an upper surface of the AA; a stacked covered on the substrate; a first insula...