ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,756, issued on July 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Active region structure and the forming method thereof" was invented by Gang-Yi Lin (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides an active region structure, the active region structure includes a plurality of sub-closed conductive patterns located on a substrate, the sub-closed conductive patterns are in contact with each other and form a larger closed pattern, a first boundary of the larger closed pattern extends along a horizontal direction, and a second boundary of the larger closed patt...