US Patent Issued to Fujian Jinhua Integrated Circuit on April 7 for "Semiconductor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,769, issued on April 7, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China).

"Semiconductor device and manufacturing method thereof" was invented by Guoguo Kong (Quanzhou City, China), Gang Wu (Quanzhou City, China), Mingru Ge (Quanzhou City, China), Shiwei He (Quanzhou City, China), Hsien-Shih Chu (Quanzhou City, China) and Junkun Chen (Quanzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof are disclosed in the present invention. The semiconductor device includes a source structure; a gate structure disposed above the source structure; a first openin...