US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Silicon carbide semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,227, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing the same" was invented by Naoyuki Ohse (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes: a drift layer of a first conductivity-type; a base region of a second conductivity-type provided on a top surface side of the drift layer; a source contact region of the first conductivity-type including silicon carbide having a 3C-structure provided on a top surface side of the base region; a gate electrode buried inside a gate trench with a gate i...