US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Semiconductor device with a first parallel pn structure in the active region and a second parallel pn structure in the termination region wherein the depth of the second parallel structure becomes stepwise shallower towards the periphery" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,218, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device with a first parallel pn structure in the active region and a second parallel pn structure in the termination region wherein the depth of the second parallel structure becomes stepwise shallower towards the periphery" was invented by Noriaki Yao (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A superjunction semiconductor device has: a semiconductor substrate of a first conductivity type; a buffer layer of the first conductivity type, provided on a front surface of the semiconductor substrate and having an impurity concentrat...