US Patent Issued to FUJI ELECTRIC on Sept. 1 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,210, issued on Sept. 1, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device" was invented by Takamasa Ishikawa (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The diode portion includes: a plurality of trench portions, a drift region of a first conductivity type, an anode region of a second conductivity type provided above the drift region and having a doping concentration higher than that of a base region; and a second conductivity type region provided on the front surface of the semiconductor substrate above the anode region and having a doping concentration higher than that of the anode region, an...