ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,158, issued on May 5, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).
"Semiconductor device manufacturing method" was invented by Yuya Takahashi (Matsumoto, Japan) and Shunsuke Tanaka (Matsumoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a manufacturing method of a semiconductor device, comprising: performing a zincate treatment on a first metal layer provided above a semiconductor substrate with a zincate solution; forming a nickel-plated layer above the first metal layer; and forming a gold-plated layer above the nickel-plated layer, wherein in the performing the zincate treatment, a flow rate of the zincate solution...