US Patent Issued to FUJI ELECTRIC on May 19 for "Silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,177, issued on May 19, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device" was invented by Manabu Takei (Shiojiri-city, Japan), Masakazu Baba (Tsukuba, Japan), Masakazu Okada (Tsukuba, Japan) and Shinsuke Harada (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device, including a semiconductor substrate having an active region and a termination region that surrounds the active region in a top view, a first parallel pn layer provided in the semiconductor substrate in the active region, a second parallel pn layer provided in the semiconductor substrate in the ter...