US Patent Issued to FUJI ELECTRIC on May 12 for "Silicon carbide semiconductor device and method for manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,394, issued on May 12, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method for manufacturing the same" was invented by Keishirou Kumada (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes an n-type drift layer disposed on an n-type silicon carbide substrate; an n-type current spreading layer disposed on a top surface of the drift layer, having a higher impurity concentration than the drift layer; a p-type base region disposed on a top surface of the current spreading layer; a p-type gate-bottom protection region located in the current s...