US Patent Issued to FUJI ELECTRIC on May 12 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,584, issued on May 12, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Misaki Uchida (Matsumoto, Japan), Takashi Yoshimura (Matsumoto, Japan), Hiroshi Takishita (Matsumoto, Japan), Motoyoshi Kubouchi (Matsumoto, Japan) and Michio Nemoto (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type; a high-concentration region of a first conductivity type; and a lo...