US Patent Issued to FUJI ELECTRIC on May 12 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,386, issued on May 12, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Nao Suganuma (Matsumoto, Japan), Yosuke Sakurai (Azumino, Japan), Seiji Noguchi (Matsumoto, Japan), Ryutaro Hamasaki (Matsumoto, Japan) and Takuya Yamada (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a transistor portion, in which the transistor portion has a drift region of a first conductivity type provided in a semiconductor substrate, a base region of a second conductivity type provided above the drift region, an accu...