US Patent Issued to FUJI ELECTRIC on March 31 for "Semiconductor device having an edge termination structure and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,479, issued on March 31, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device having an edge termination structure and manufacturing method thereof" was invented by Kosuke Yoshida (Matsumoto-city, Japan), Koh Yoshikawa (Matsumoto-city, Japan) and Nao Suganuma (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; an active portion, in which at least one of a transistor portion and a diode portion is provided, in the semiconductor substrate; and an edge termination structure portion pro...