ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,500, issued on March 31, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device" was invented by Toshiyuki Matsui (Matsumoto-city, Japan) and Kazuki Kamimura (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a semiconductor substrate having a transistor portion and a diode portion; and an emitter electrode and a gate electrode provided above a front surface of the semiconductor substrate, wherein the transistor portion has a plurality of trench portions electrically connected to the gate electrode, a drift region of a first conductivity type provided in the se...