US Patent Issued to FUJI ELECTRIC on June 9 for "Silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,838, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device" was invented by Takeshi Tawara (Tsukuba-city, Japan) and Shinsuke Harada (Tsukuba-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device has an n-type silicon carbide semiconductor substrate, an n-type first semiconductor layer, n-type first JFET regions, a p-type second semiconductor layer, n-type first semiconductor regions, and trenches. The first semiconductor layer has an impurity concentration lower than that of the substrate. The first JFET regions are provided in a surface layer of ...