US Patent Issued to FUJI ELECTRIC on June 9 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,813, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device" was invented by Takamasa Ishikawa (Matsumoto, Japan) and Noriaki Yao (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device, wherein the buffer region of the semiconductor substrate has a plurality of hydrogen chemical concentration peaks arranged in different positions in the depth direction of the semiconductor substrate, a plurality of doping concentration peaks; and a high concentration region provided between the deepest hydrogen chemical concentration peak and the drift region, wherein the doping c...