US Patent Issued to FUJI ELECTRIC on June 16 for "Silicon carbide semiconductor device and method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,274, issued on June 16, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing semiconductor device" was invented by Takashi Tsuji (Nagano, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An AlSi electrode containing an aluminum alloy that contains silicon is sputtered on a surface of a semiconductor substrate that contains silicon carbide. Si nodules having a dendrite structure precipitate in AlSi electrode. At least some of the Si nodules have a dendrite structure, and the rest of the Si nodules have a prismatic structure. A height of the Si nodules having either dendrite st...