US Patent Issued to FUJI ELECTRIC on July 28 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,525, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device" was invented by Yoshihito Ichikawa (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a first polysilicon layer of a gate runner that is electrically connected to a gate pad via a built-in gate resistor constituted by a second polysilicon layer, and has a potential lower than that of the gate pad. The first polysilicon layer is disposed apart from a third polysilicon layer. The third polysilicon layer directly beneath the gate pad and the first polysilicon layer are apart from each ...