ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,496, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Silicon carbide semiconductor device" was invented by Akimasa Kinoshita (Matsumoto-city, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an edge termination region, p-type regions and p--type regions configuring a spatial modulation JTE structure are selectively provided at depth positions apart from a front surface of a semiconductor substrate. Respective bottoms of the p-type regions and the p--type regions are at depth positions deeper from the front surface of the semiconductor substrate than is a bottom of a p-type peripheral region of a peripheral portio...