US Patent Issued to FUJI ELECTRIC on July 28 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,502, issued on July 28, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device" was invented by Yuichi Harada (Matsumoto-city, Japan), Seiji Noguchi (Matsumoto-city, Japan), Norihiro Komiyama (Matsumoto-city, Japan), Yoshihiro Ikura (Matsumoto-city, Japan), Yosuke Sakurai (Azumino-city, Japan) and Yoshihisa Suzuki (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; and a buffer region of the first conductivity type provided between the drift region and a lower surface of the semiconduc...