ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,231, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device" was invented by Akimasa Kinoshita (Matsumoto-city, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "N+-type source regions, low-concentration regions, and p++-type contact regions are each selectively provided in surface regions of a semiconductor substrate, at a front surface thereof, and are in contact with a source electrode. The n+-type source regions and the low-concentration regions are in contact with a gate insulating film at sidewalls of a trench and are adjacent to channel portions of a p-type base region, in a depth direction. The ...