US Patent Issued to FUJI ELECTRIC on July 14 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,049, issued on July 14, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Motoyoshi Kubouchi (Matsumoto-city, Japan), Takashi Yoshimura (Matsumoto-city, Japan), Hiroshi Takishita (Matsumoto-city, Japan), Misaki Uchida (Matsumoto-city, Japan) and Michio Nemoto (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type which is disposed on the lower surface s...