US Patent Issued to FUJI ELECTRIC on Feb. 24 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,813, issued on Feb. 24, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Takashi Yoshimura (Matsumoto, Japan), Makoto Shimosawa (Matsumoto, Japan), Motoyoshi Kubouchi (Matsumoto, Japan) and Misaki Uchida (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a MOS gate structure provided in a semiconductor substrate, including: an interlayer dielectric film which includes a contact hole and is provided above the semiconductor substrate; a conductive first barrier metal layer provided on side walls of...