US Patent Issued to FUJI ELECTRIC on Feb. 24 for "Nitride semiconductor device and method for manufacturing nitride semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,791, issued on Feb. 24, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Nitride semiconductor device and method for manufacturing nitride semiconductor device" was invented by Ryo Tanaka (Hino, Japan), Shinya Takashima (Hachioji, Japan) and Katsunori Ueno (Matsumoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An impurity region of P-type that the field effect transistor of the nitride semiconductor device includes has a peak position at which concentration of P-type impurities reaches a maximum at a position located away from an interface with a gate insulating film. The impurity region has an inflection point at which concentra...