US Patent Issued to FUJI ELECTRIC on Aug. 4 for "Superjunction silicon carbide semiconductor device having trench gate structures formed on stacked layers of parallel pn junctions extending in different directions and method thereof" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,753, issued on Aug. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Superjunction silicon carbide semiconductor device having trench gate structures formed on stacked layers of parallel pn junctions extending in different directions and method thereof" was invented by Akimasa Kinoshita (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes lower and upper parallel pn structures. The lower parallel pn structure is disposed at a first semiconductor layer and includes lower first columns of a first conductivity type and lower second columns of a second conductivity type, the lower first and se...