US Patent Issued to FUJI ELECTRIC on Aug. 4 for "Semiconductor device having reduced risk of dielectric breakdown" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,729, issued on Aug. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device having reduced risk of dielectric breakdown" was invented by Yuki Karamoto (Matsumoto-city, Japan), Kaname Mitsuzuka (Matsumoto-city, Japan) and Yoshihiro Ikura (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a semiconductor substrate. The semiconductor substrate has: an active portion; and a plurality of gate trench portions provided in the active portion on an upper surface of the semiconductor substrate and extending along an extending direction. The semiconductor device further i...