US Patent Issued to FUJI ELECTRIC on Aug. 25 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,799, issued on Aug. 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Takeyoshi Nishimura (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, including: a semiconductor substrate, a drift layer provided on the semiconductor substrate, a base layer provided in the drift layer at a surface thereof, a plurality of source regions selectively provided in the base layer at a surface thereof, a plurality of gate electrodes provided in the base layer and the source regions via a plurality of gate insulating films, res...