US Patent Issued to FUJI ELECTRIC on Aug. 25 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,075, issued on Aug. 25, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Method of manufacturing semiconductor device" was invented by Noriaki Noji (Nagano-city, Japan), Naoko Kodama (Matsumoto-city, Japan), Kazuhiro Kitahara (Matsumoto-city, Japan), Tatsuya Hashimoto (Azumino-city, Japan), Ryota Kataoka (Matsumoto-city, Japan) and Shunya Hayashida (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a surface structure having a MOS structure in a semiconductor substrate; forming an interlayer insulating film partially covering the surface structure; forming...