US Patent Issued to FUJI ELECTRIC, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY on July 21 for "Superjunction semiconductor device having varying impurity concentrations between semiconductor substrate and parallel PN structure" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,228, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan) and NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).

"Superjunction semiconductor device having varying impurity concentrations between semiconductor substrate and parallel PN structure" was invented by Naoki Kumagai (Nagano, Japan), Masakazu Okada (Tsukuba, Japan) and Shinsuke Harada (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A superjunction semiconductor device having a termination structure portion surrounding an active region in a plan view. The device includes: a semiconductor substrate; a first semiconductor layer provi...