US Patent Issued to FUJI ELECTRIC, DENSO on Nov. 3 for "Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,394, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan) and DENSO Corp. (Kariya-city, Japan).

"Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device" was invented by Naruhisa Nagata (Matsumoto-city, Japan), Yoshiyuki Sugahara (Yamagata-mura, Japan), Masanobu Iwaya (Matsumoto-city, Japan), Tomohiro Mimura (Kariya-city, Japan) and Kensuke Hata (Kariya-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide semiconductor substrate in which, on a front surface of a starting substr...