US Patent Issued to FUDAN UNIVERSITY, SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER on March 31 for "Fin field-effect transistor device with hybrid conduction mechanism" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,476, issued on March 31, was assigned to FUDAN UNIVERSITY (Shanghai) and SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER Co. LTD. (Shanghai).

"Fin field-effect transistor device with hybrid conduction mechanism" was invented by Chunlei Wu (Shanghai), Yumin Xu (Shanghai), Boqian Shen (Shanghai), Fei Zhao (Shanghai), Zichen Yang (Shanghai), Wei Zhang (Shanghai) and Min Xu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin field-effect transistor device with hybrid conduction mechanism, including a fin field-effect transistor, a second source region, and a second drain region; the fin field-effect transistor includes a substrat...