US Patent Issued to FS-SEMI SEMICONDUCTOR on April 21 for "Self-aligned floating gate formation in nonvolatile memory device fabrication" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,543, issued on April 21, was assigned to FS-SEMI SEMICONDUCTOR Corp. LTD. (Hukou Township, Hsinchu County, Taiwan).

"Self-aligned floating gate formation in nonvolatile memory device fabrication" was invented by Lee Wang (Hukou Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming floating gates in a non-volatile memory array is disclosed, comprising: patterning and etching portions of a hard-mask dielectric layer, a conductive layer and a tunneling oxide layer to define stacked structures over a substrate; conformally depositing a spacer dielectric layer over the substrate; etching a portion of the spacer dielectric ...