US Patent Issued to Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung on June 30 for "Photodiode with orthogonal layer structure" (German Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,380, issued on June 30, was assigned to Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V. (Munich).

"Photodiode with orthogonal layer structure" was invented by Ignaz Eisele (Munich), Martin Heigl (Munich), Karl Neumeier (Munich), Lars Nebrich (Munich) and Leonhard Sturm-Rogon (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a photodiode having two electrodes and an absorption volume for absorbing photons, wherein the absorption volume has a photon entry area, wherein the two electrodes are configured to generate an electric field in an active region between the two electrodes when a reverse voltage is ap...