US Patent Issued to FOCUS LIGHTINGS TECH on April 21 for "AIN layer, its fabrication process and epitaxial wafer" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,656, issued on April 21, was assigned to FOCUS LIGHTINGS TECH Co. LTD. (Suzhou, China).

"AIN layer, its fabrication process and epitaxial wafer" was invented by Chuanguo Chen (Suzhou, China), Baokun Tang (Suzhou, China), Zhijun Xu (Suzhou, China), Han Jiang (Suzhou, China), Weizi Song (Suzhou, China) and Xiaosong Rao (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application illustrates an AlN layer, a fabrication process and an epitaxial wafer, wherein the AlN layer is provided on a substrate layer, the substrate layer comprising a body and a protrusion, and the AlN layer comprising a first layer and a second layer; the ...