US Patent Issued to FOCUS LIGHTINGS TECH (SUQIAN) on Sept. 1 for "Growth method and structure of LED epitaxy" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,286, issued on Sept. 1, was assigned to FOCUS LIGHTINGS TECH (SUQIAN) Co. LTD. (Suqian, China).

"Growth method and structure of LED epitaxy" was invented by Guochang Li (Suqian, China), Hao Chen (Suqian, China), Zhijun Xu (Suqian, China), Ganyang Xu (Suqian, China), Han Jiang (Suqian, China) and Wenjun Wang (Suqian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A growth method of LED epitaxy comprises: providing a layer of substrate, wherein the substrate is an Al2O3 substrate or an Al2O3/SiO2 composite substrate; successively depositing and growing a SiC buffer layer and a u-GaN layer on the substrate; wherein the temperature used for deposi...