US Patent Issued to FLOSFIA on July 21 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,227, issued on July 21, was assigned to FLOSFIA INC. (Kyoto, Japan).

"Semiconductor device" was invented by Masahiro Sugimoto (Kyoto, Japan), Shinpei Matsuda (Kyoto, Japan), Yasushi Higuchi (Kyoto, Japan) and Kazuyoshi Norimatsu (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer, a drift layer, and a source region; a gate electrode arranged over the channel layer across a gate insulating film; a current blocking region arranged between the channel layer and the drift layer; and a source electrode provided on the source regio...