US Patent Issued to Floadia on April 7 for "Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,743, issued on April 7, was assigned to Floadia Corp. (Tokyo).

"Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device" was invented by Daisuke Okada (Kodaira, Japan), Kazumasa Yanagisawa (Kodaira, Japan), Fukuo Owada (Kodaira, Japan), Shoji Yoshida (Kodaira, Japan), Yasuhiko Kawashima (Kodaira, Japan), Shinji Yoshida (Kodaira, Japan), Yasuhiro Taniguchi (Kodaira, Japan) and Kosuke Okuyama (Kodaira, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor memory device, voltage application from a memory gate electrode of the memory capacitor to a word line can be bl...