US Patent Issued to First Solar on April 21 for "Doped photovoltaic semiconductor layers and methods of making" (British, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,650, issued on April 21, was assigned to First Solar Inc. (Phoenix).

"Doped photovoltaic semiconductor layers and methods of making" was invented by Sachit Grover (Campbell, Calif.), Stuart Irvine (St. Asaph, Great Britain), Xiaoping Li (Santa Clara, Calif.), Roger Malik (Santa Clara, Calif.), Shahram Seyedmohammadi (Trabuco Canyon, Calif.), Gang Xiong (Santa Clara, Calif.) and Wei Zhang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconduc...