US Patent Issued to Ferroelectric Memory on Oct. 20 for "Memory cell and method for changing properties of an electrode" (German Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,456, issued on Oct. 20, was assigned to Ferroelectric Memory GmbH (Dresden, Germany).

"Memory cell and method for changing properties of an electrode" was invented by Stefan Ferdinand Muller (Radebeul, Germany), Tony Schenk (Dresden, Germany) and Alireza Kashir (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various aspects relate to a memory cell including: a first electrode; a second electrode; and a memory element disposed between the first electrode and the second electrode. The memory element includes a spontaneously polarizable material. The first electrode, the second electrode, and the memory element forming a memory capacit...