US Patent Issued to Ferroelectric Memory on July 21 for "Memory cell, memory device, and methods thereof" (German Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,197, issued on July 21, was assigned to Ferroelectric Memory GmbH (Dresden, Germany).

"Memory cell, memory device, and methods thereof" was invented by Stefan Ferdinand Muller (Radebeul, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various aspects relate to a memory cell, the memory cell including: a field-effect transistor structure; and a capacitive memory structure; wherein the field-effect transistor structure and the capacitive memory structure are configured to form a capacitive voltage divider; wherein the capacitive memory structure includes: a first electrode layer, a second electrode layer, and a memory element structured to have...