US Patent Issued to FAST SIC SEMICONDUCTOR on Nov. 3 for "Silicon carbide semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,404, issued on Nov. 3, was assigned to FAST SIC SEMICONDUCTOR Inc. (Hsinchu City, Taiwan).

"Silicon carbide semiconductor device" was invented by Cheng-Tyng Yen (Hsinchu, Taiwan), Hsiang-Ting Hung (Hsinchu, Taiwan) and Fu-Jen Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device has an active area, a termination area surrounding the active area in a plan view. The silicon carbide semiconductor device comprises a SiC substrate, a drift layer, an insulating layer, a polysilicon layer, an interlayer dielectric layer disposed on the polysilicon layer, and a metal layer. The polysilicon layer includes a...