US Patent Issued to Fast SiC Semiconductor on April 21 for "Silicon carbide semiconductor device for pinching off leakage current" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,569, issued on April 21, was assigned to Fast SiC Semiconductor Inc. (Hsinchu City, Taiwan).

"Silicon carbide semiconductor device for pinching off leakage current" was invented by Fu-Jen Hsu (Hsinchu City, Taiwan), Cheng-Tyng Yen (Hsinchu City, Taiwan) and Hsiang-Ting Hung (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device comprises a SiC substrate, a drift layer disposed on the substrate, a plurality of first doping regions formed near a surface of the drift layer, a plurality of second doping regions formed near the surface of the drift layer and between the first doping regions and a firs...