US Patent Issued to Faraday Technology on July 7 for "Memory physical layer interface, memory apparatus and method thereof" (Indian Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,178, issued on July 7, was assigned to Faraday Technology Corp. (Hsinchu, Taiwan).

"Memory physical layer interface, memory apparatus and method thereof" was invented by Sivaramakrishnan Subramanian (Bengaluru, India), Hussainvali Shaik (Bangalore, India), Sandeep Kumar Mohanta (Odisha, India), Pydi Siva Sekhar (Andhra Pradesh, India), Eswar Reddi (Andhrapradesh, India) and Basimsetti Subrahmanyam Suresh (Andhra Pradesh, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus includes a memory device, a memory controller and a memory physical layer interface. The memory physical layer interface comprises a multi-tap decision feedback ...