US Patent Issued to Etron Technology on June 23 for "Memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,045, issued on June 23, was assigned to Etron Technology Inc. (Hsinchu, Taiwan).

"Memory device" was invented by Chun Shiah (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes: a package substrate; a memory chip, with chip inputs/outputs (I/Os), and attached to the package substrate; and package terminals, disposed on the package substrate, and having: functional package terminals, connected to the chip I/Os; no-connect (NC) package terminals, arranged among the functional package terminals and not connected to any of the chip I/Os; and redesigned NC package terminals, as additional...