ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,124, issued on Aug. 11, was assigned to Etron Technology Inc. (Hsinchu, Taiwan).

"Semiconductor device structure" was invented by Chao-Chun Lu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a silicon substrate, a transistor, and an interconnection. The silicon substrate has a silicon surface. The transistor includes a gate structure, a first conductive region, a second conductive region, and a channel under the silicon surface. The interconnection is extended beyond the transistor and coupled to the first conductive region of the transistor. The interconnection is disposed under the sili...